All MOSFET. KU035N06P Datasheet

 

KU035N06P MOSFET. Datasheet pdf. Equivalent


   Type Designator: KU035N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 167 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 160 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 200 nC
   Rise Time (tr): 150 nS
   Drain-Source Capacitance (Cd): 960 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0029 Ohm
   Package: TO220AB

 KU035N06P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU035N06P Datasheet (PDF)

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 ku035n06p.pdf

KU035N06P KU035N06P

KU035N06PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description AThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +A 9.9 0.2B

Datasheet: KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , IRF1010E , KU047N08P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F .

 

 
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