KU035N06P Specs and Replacement
Type Designator: KU035N06P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 960 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO220AB
KU035N06P substitution
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KU035N06P datasheet
ku035n06p.pdf
KU035N06P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + A 9.9 0.2 B... See More ⇒
Detailed specifications: KMB6D0NS30QA, KMB7D0DN40QB, KMD6D0DN30QA, KMD6D0DN40Q, KMD7D5P40QA, KMD9D0DN30QA, KML0D3P20V, KML0D4N20V, 2SK3878, KU047N08P, KU086N10F, KU086N10P, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F
Keywords - KU035N06P MOSFET specs
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