KU035N06P Datasheet and Replacement
Type Designator: KU035N06P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 960 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO220AB
KU035N06P substitution
KU035N06P Datasheet (PDF)
ku035n06p.pdf

KU035N06PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description AThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +A 9.9 0.2B
Datasheet: KMB6D0NS30QA , KMB7D0DN40QB , KMD6D0DN30QA , KMD6D0DN40Q , KMD7D5P40QA , KMD9D0DN30QA , KML0D3P20V , KML0D4N20V , IRFP260 , KU047N08P , KU086N10F , KU086N10P , KU310N10D , KU310N10P , KF10N60F , KF10N60P , KF10N68F .
History: BUZ111S | IRLR8715CPBF | FQB10N50CFTM | CS3N90A8 | SUV90N06-05 | FDD770N15A | IRF7530
Keywords - KU035N06P MOSFET datasheet
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History: BUZ111S | IRLR8715CPBF | FQB10N50CFTM | CS3N90A8 | SUV90N06-05 | FDD770N15A | IRF7530



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