KF11N50F Specs and Replacement
Type Designator: KF11N50F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 46.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
Package: TO220IS
KF11N50F substitution
- MOSFET ⓘ Cross-Reference Search
KF11N50F datasheet
kf11n50p-f.pdf
KF11N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF11N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A... See More ⇒
Detailed specifications: KU047N08P, KU086N10F, KU086N10P, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F, 4435, KF11N50P, KF12N60F, KF12N60P, KF12N68F, KF13N50F, KF13N50P, KF16N50F, KF1N60D
Keywords - KF11N50F MOSFET specs
KF11N50F cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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