KF11N50P PDF and Equivalents Search

 

KF11N50P Specs and Replacement

Type Designator: KF11N50P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO220AB

KF11N50P substitution

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KF11N50P datasheet

 0.1. Size:415K  kec
 kf11n50p-f.pdf pdf_icon

KF11N50P

KF11N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF11N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode power supplies. A... See More ⇒

Detailed specifications: KU086N10F, KU086N10P, KU310N10D, KU310N10P, KF10N60F, KF10N60P, KF10N68F, KF11N50F, SPP20N60C3, KF12N60F, KF12N60P, KF12N68F, KF13N50F, KF13N50P, KF16N50F, KF1N60D, KF1N60I

Keywords - KF11N50P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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