KF1N60D Specs and Replacement
Type Designator: KF1N60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: DPAK
KF1N60D substitution
- MOSFET ⓘ Cross-Reference Search
KF1N60D datasheet
kf1n60d-i.pdf
KF1N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF1N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for switching mode L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 power supplies. ... See More ⇒
kf1n60l.pdf
KF1N60L SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description B D DIM MILLIMETERS This planar stripe MOSFET has better characteristics, such as fast A 7.20 MAX switching time, low on resistance, low gate charge and excellent B 5.20 MAX C 0.60 MAX avalanche characteristics. It is mainly suitable for switching mode P D 2.50 MAX DEPTH 0.2 E 1.15 MAX... See More ⇒
Detailed specifications: KF11N50F, KF11N50P, KF12N60F, KF12N60P, KF12N68F, KF13N50F, KF13N50P, KF16N50F, IRF1010E, KF1N60I, KF1N60L, KF2N60D, KF2N60F, KF2N60I, KF2N60L, KF2N60P, KF3N40D
Keywords - KF1N60D MOSFET specs
KF1N60D cross reference
KF1N60D equivalent finder
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KF1N60D substitution
KF1N60D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: KF2N60I
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