KF3N50DZ Datasheet and Replacement
Type Designator: KF3N50DZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: DPAK
KF3N50DZ substitution
KF3N50DZ Datasheet (PDF)
kf3n50dz-ds.pdf

KF3N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forLC D_A 6.60 + 0.20_electronic ballast and s
kf3n50dz-iz.pdf

KF3N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forLC D_A 6.60 + 0.20_electronic bal
kf3n50fz-fs.pdf

KF3N50FZ/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERS_A 10.16 0.2+electronic ballast and switchin
Datasheet: KF2N60F , KF2N60I , KF2N60L , KF2N60P , KF3N40D , KF3N40I , KF3N40W , KF3N50DS , 10N65 , KF3N50FS , KF3N50FZ , KF3N50IZ , KF3N60D , KF3N60F , KF3N60I , KF3N60P , KF3N80F .
History: SMG2336N | FHD100N03A
Keywords - KF3N50DZ MOSFET datasheet
KF3N50DZ cross reference
KF3N50DZ equivalent finder
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KF3N50DZ substitution
KF3N50DZ replacement
History: SMG2336N | FHD100N03A



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