KF3N60I MOSFET Datasheet: N-Ch, 600V, 2.3A. Full specification with pinout and replacement list

KF3N60I Specs and Replacement

Type Designator: KF3N60I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: IPAK

KF3N60I substitution

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KF3N60I datasheet

8.1. Size:1008K kec
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KF3N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp... See More ⇒

8.2. Size:94K kec
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KF3N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9 ... See More ⇒

Detailed specifications: KF3N40W, KF3N50DS, KF3N50DZ, KF3N50FS, KF3N50FZ, KF3N50IZ, KF3N60D, KF3N60F, RFP50N06, KF3N60P, KF3N80F, KF4N20LD, KF4N20LI, KF4N20LW, KF4N65F, KF4N65P, KF4N80F