All MOSFET. KF4N20LI Datasheet

 

KF4N20LI Datasheet and Replacement


   Type Designator: KF4N20LI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.89 Ohm
   Package: IPAK
 

 KF4N20LI substitution

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KF4N20LI Datasheet (PDF)

 7.1. Size:596K  kec
 kf4n20ld i.pdf pdf_icon

KF4N20LI

KF4N20LD/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF4N20LDThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for LED Lighting and C D_A 6.60 + 0.20_B 6.10 + 0.20switching m

 7.2. Size:634K  kec
 kf4n20lw.pdf pdf_icon

KF4N20LI

KF4N20LWSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for LED Lighting andswitching mode power supplies.FEATURES VDSS(Min.)= 200V, ID= 1ADrain-Source ON

Datasheet: KF3N50FZ , KF3N50IZ , KF3N60D , KF3N60F , KF3N60I , KF3N60P , KF3N80F , KF4N20LD , 2N60 , KF4N20LW , KF4N65F , KF4N65P , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ , KF5N50F .

History: IPP120N04S3-02

Keywords - KF4N20LI MOSFET datasheet

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