KF4N20LW Specs and Replacement
Type Designator: KF4N20LW
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.89 Ohm
Package: SOT223
KF4N20LW substitution
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KF4N20LW datasheet
kf4n20lw.pdf
KF4N20LW SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 1A Drain-Source ON ... See More ⇒
kf4n20ld i.pdf
KF4N20LD/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N20LD This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L avalanche characteristics. It is mainly suitable for LED Lighting and C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching m... See More ⇒
Detailed specifications: KF3N50IZ, KF3N60D, KF3N60F, KF3N60I, KF3N60P, KF3N80F, KF4N20LD, KF4N20LI, IRF520, KF4N65F, KF4N65P, KF4N80F, KF5N50D, KF5N50DS, KF5N50DZ, KF5N50F, KF5N50FS
Keywords - KF4N20LW MOSFET specs
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