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KF5N65D Specs and Replacement


   Type Designator: KF5N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK
 

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KF5N65D Specs

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KF5N65D

KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el... See More ⇒

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KF5N65D

KF5N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, fast reverse recovery time, low on resistance, low gate F DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for E _ G A 9.9 + 0.2 electronic ballast ... See More ⇒

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KF5N65D

KF5N65D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N65D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 el... See More ⇒

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Detailed specifications: KF5N53DS , KF5N53F , KF5N53FS , KF5N60D , KF5N60F , KF5N60FZ , KF5N60I , KF5N60P , MMIS60R580P , KF5N65F , KF6N60D , KF6N60F , KF6N60I , KF7N50D , KF7N50F , KF7N50I , KF7N50P .

Keywords - KF5N65D MOSFET specs

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