KF5N65D
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF5N65D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 69.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5
Ohm
Package:
DPAK
KF5N65D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF5N65D
Datasheet (PDF)
0.1. Size:482K kec
kf5n65d-i.pdf
KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el
8.1. Size:414K kec
kf5n65p-f.pdf
KF5N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, fast reverse recovery time, low on resistance, low gateFDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forE _G A 9.9 + 0.2electronic ballast
8.2. Size:480K kec
kf5n65i.pdf
KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el
Datasheet: FMP36-015P
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