All MOSFET. KF5N65D Datasheet

 

KF5N65D Datasheet and Replacement


   Type Designator: KF5N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DPAK
 

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KF5N65D Datasheet (PDF)

 0.1. Size:482K  kec
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KF5N65D

KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el

 8.1. Size:414K  kec
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KF5N65D

KF5N65P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, fast reverse recovery time, low on resistance, low gateFDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable forE _G A 9.9 + 0.2electronic ballast

 8.2. Size:480K  kec
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KF5N65D

KF5N65D/I SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N65DThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20el

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History: H2302 | IRFZ44VL

Keywords - KF5N65D MOSFET datasheet

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