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KF7N50D Spec and Replacement


   Type Designator: KF7N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: DPAK

 KF7N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KF7N50D Specs

 0.1. Size:387K  kec
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KF7N50D

KF7N50D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.... See More ⇒

 8.1. Size:1219K  kec
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KF7N50D

KF7N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 7... See More ⇒

Detailed specifications: KF5N60FZ , KF5N60I , KF5N60P , KF5N65D , KF5N65F , KF6N60D , KF6N60F , KF6N60I , AO4468 , KF7N50F , KF7N50I , KF7N50P , KF7N60F , KF7N60P , KF7N65F , KF7N65P , KF7N68F .

Keywords - KF7N50D MOSFET specs

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