KF7N50I Specs and Replacement
Type Designator: KF7N50I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
Package: IPAK
KF7N50I substitution
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KF7N50I datasheet
kf7n50p-f.pdf
KF7N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent DIM avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 7... See More ⇒
kf7n50d-i.pdf
KF7N50D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N50D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS L C D _ A 6.60 + 0.20 avalanche characteristics. It is mainly suitable for electronic ballast and _ B 6.10 + 0.20 _ C 5.... See More ⇒
Detailed specifications: KF5N60P, KF5N65D, KF5N65F, KF6N60D, KF6N60F, KF6N60I, KF7N50D, KF7N50F, IRFZ44N, KF7N50P, KF7N60F, KF7N60P, KF7N65F, KF7N65P, KF7N68F, KF7N80F, KF8N60F
Keywords - KF7N50I MOSFET specs
KF7N50I cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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