All MOSFET. KF7N50I Datasheet

 

KF7N50I Datasheet and Replacement


   Type Designator: KF7N50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: IPAK
 

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KF7N50I Datasheet (PDF)

 8.1. Size:1219K  kec
 kf7n50p-f.pdf pdf_icon

KF7N50I

KF7N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentDIMavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V, ID= 7

 8.2. Size:387K  kec
 kf7n50d-i.pdf pdf_icon

KF7N50I

KF7N50D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N50DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLC D_A 6.60 + 0.20avalanche characteristics. It is mainly suitable for electronic ballast and_B 6.10 + 0.20_C 5.

Datasheet: KF5N60P , KF5N65D , KF5N65F , KF6N60D , KF6N60F , KF6N60I , KF7N50D , KF7N50F , IRFZ44N , KF7N50P , KF7N60F , KF7N60P , KF7N65F , KF7N65P , KF7N68F , KF7N80F , KF8N60F .

History: HIRF730F | HYG060P04LQ1V

Keywords - KF7N50I MOSFET datasheet

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