KF7N50I
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF7N50I
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 69.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 5.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.83
Ohm
Package:
IPAK
KF7N50I
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF7N50I
Datasheet (PDF)
8.1. Size:1219K kec
kf7n50p-f.pdf
KF7N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentDIMavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V, ID= 7
8.2. Size:387K kec
kf7n50d-i.pdf
KF7N50D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N50DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLC D_A 6.60 + 0.20avalanche characteristics. It is mainly suitable for electronic ballast and_B 6.10 + 0.20_C 5.
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