KF8N60P PDF and Equivalents Search

 

KF8N60P Specs and Replacement

Type Designator: KF8N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220AB

KF8N60P substitution

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KF8N60P datasheet

 0.1. Size:579K  kec
 kf8n60p-f.pdf pdf_icon

KF8N60P

KF8N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF8N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli... See More ⇒

Detailed specifications: KF7N50P, KF7N60F, KF7N60P, KF7N65F, KF7N65P, KF7N68F, KF7N80F, KF8N60F, IRFZ44, KF9N25D, KF9N25F, KF9N25P, KF9N50F, KF9N50P, KF3N80D, KF3N80I, KF60N06P

Keywords - KF8N60P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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