KF9N25P
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF9N25P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 96
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31
Ohm
Package:
TO220AB
KF9N25P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF9N25P
Datasheet (PDF)
0.1. Size:93K kec
kf9n25p-f.pdf
KF9N25P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF9N25PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC ConvertersE DIM MILLIMETERSG_and switching mode power supplies. A 9.9 +
8.1. Size:382K kec
kf9n25d.pdf
KF9N25DSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for DC/DC Converters LC D_A 6.60 + 0.20_B 6.10 + 0.20and switching mode power
Datasheet: IRFP360LC
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