KF3N80D MOSFET. Datasheet pdf. Equivalent
Type Designator: KF3N80D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 69.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
Package: DPAK
KF3N80D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF3N80D Datasheet (PDF)
kf3n80d i.pdf
KF3N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF3N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for LED Lighting andLC D_A 6.60 + 0.20switching mode power supplies.
kf3n80f.pdf
KF3N80FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power supplie
Datasheet: KF7N80F , KF8N60F , KF8N60P , KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P , IRF3710 , KF3N80I , KF60N06P , KHB1D0N60D , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 .
