KF60N06P Specs and Replacement
Type Designator: KF60N06P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 113 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 490 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO220AB
KF60N06P substitution
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KF60N06P datasheet
kf60n06p.pdf
KF60N06P SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction , electronic lamp ballasts based on half ... See More ⇒
Detailed specifications: KF8N60P, KF9N25D, KF9N25F, KF9N25P, KF9N50F, KF9N50P, KF3N80D, KF3N80I, IRFB4227, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, KHB2D0N60P, KHB3D0N70F
Keywords - KF60N06P MOSFET specs
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