All MOSFET. KF60N06P Datasheet

 

KF60N06P Datasheet and Replacement


   Type Designator: KF60N06P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO220AB
 

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KF60N06P Datasheet (PDF)

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KF60N06P

KF60N06PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection , electronic lamp ballasts based on half

Datasheet: KF8N60P , KF9N25D , KF9N25F , KF9N25P , KF9N50F , KF9N50P , KF3N80D , KF3N80I , AON6414A , KHB1D0N60D , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F .

History: APT4080BN | 25N10G-TM3-T

Keywords - KF60N06P MOSFET datasheet

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