All MOSFET. KHB2D0N60F2 Datasheet

 

KHB2D0N60F2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KHB2D0N60F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO220IS

 KHB2D0N60F2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KHB2D0N60F2 Datasheet (PDF)

 5.1. Size:89K  kec
 khb2d0n60p f f2.pdf

KHB2D0N60F2 KHB2D0N60F2

KHB2D0N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB2D0N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_avalanche characteristics. It is mainly suitable for switching mode A 9.9 + 0.2BB 15.95 MAXQpowe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2132

 

 
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