KHB2D0N60P PDF and Equivalents Search

 

KHB2D0N60P Specs and Replacement

Type Designator: KHB2D0N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: TO220AB

KHB2D0N60P substitution

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KHB2D0N60P datasheet

 ..1. Size:89K  kec
khb2d0n60p f f2.pdf pdf_icon

KHB2D0N60P

KHB2D0N60P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB2D0N60P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for switching mode A 9.9 + 0.2 B B 15.95 MAX Q powe... See More ⇒

Detailed specifications: KF3N80I, KF60N06P, KHB1D0N60D, KHB1D0N70G, KHB1D9N60D, KHB1D9N60I, KHB2D0N60F, KHB2D0N60F2, 8205A, KHB3D0N70F, KHB3D0N70P, KHB3D0N90F1, KHB3D0N90F2, KHB3D0N90P1, KHB4D0N65F, KHB4D0N65F2, KHB4D0N65P

Keywords - KHB2D0N60P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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