All MOSFET. KHB2D0N60P Datasheet

 

KHB2D0N60P Datasheet and Replacement


   Type Designator: KHB2D0N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO220AB
 

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KHB2D0N60P Datasheet (PDF)

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KHB2D0N60P

KHB2D0N60P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB2D0N60PAOThis planar stripe MOSFET has better characteristics, such as fastCFswitching time, low on resistance, low gate charge and excellentE DIM MILLIMETERSG_avalanche characteristics. It is mainly suitable for switching mode A 9.9 + 0.2BB 15.95 MAXQpowe

Datasheet: KF3N80I , KF60N06P , KHB1D0N60D , KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , 2SK3878 , KHB3D0N70F , KHB3D0N70P , KHB3D0N90F1 , KHB3D0N90F2 , KHB3D0N90P1 , KHB4D0N65F , KHB4D0N65F2 , KHB4D0N65P .

History: MS60P02NE

Keywords - KHB2D0N60P MOSFET datasheet

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