All MOSFET. KHB5D0N50F Datasheet

 

KHB5D0N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: KHB5D0N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm
   Package: TO220IS

 KHB5D0N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KHB5D0N50F Datasheet (PDF)

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 khb5d0n50p f f2.pdf

KHB5D0N50F KHB5D0N50F

KHB5D0N50P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB5D0N50PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 500V, ID= 5.0

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CES2309 | VP0808 | CEM9407A | VS3606AE

 

 
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