KHB5D0N50F Specs and Replacement
Type Designator: KHB5D0N50F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.24 Ohm
Package: TO220IS
KHB5D0N50F substitution
- MOSFET ⓘ Cross-Reference Search
KHB5D0N50F datasheet
khb5d0n50p f f2.pdf
KHB5D0N50P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB5D0N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0... See More ⇒
Detailed specifications: KHB4D0N65F2, KHB4D0N65P, KHB4D0N80F1, KHB4D0N80F2, KHB4D0N80P1, KHB4D5N60F, KHB4D5N60F2, KHB4D5N60P, 4435, KHB5D0N50F2, KHB5D0N50P, KHB6D0N40F, KHB6D0N40F2, KHB6D0N40P, KHB7D0N65F2, KHB7D0N65P1, KHB7D0N80F1
Keywords - KHB5D0N50F MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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