KHB8D8N25F2 PDF and Equivalents Search

 

KHB8D8N25F2 Specs and Replacement

Type Designator: KHB8D8N25F2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 117 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220IS

KHB8D8N25F2 substitution

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KHB8D8N25F2 datasheet

 5.1. Size:1326K  kec
 khb8d8n25p f f2.pdf pdf_icon

KHB8D8N25F2

KHB8D8N25P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB8D8N25P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 8.8A ... See More ⇒

Detailed specifications: KHB7D0N65F2, KHB7D0N65P1, KHB7D0N80F1, KHB7D0N80P1, KHB7D5N60F1, KHB7D5N60F2, KHB7D5N60P1, KHB8D8N25F, AON7506, KHB8D8N25P, KHB9D0N50F1, KHB9D0N50F2, KHB9D0N50P1, KHB9D0N90F1, KHB9D0N90N1, KHB9D0N90NA, KHB9D0N90P1

Keywords - KHB8D8N25F2 MOSFET specs

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