All MOSFET. KHB8D8N25F2 Datasheet

 

KHB8D8N25F2 Datasheet and Replacement


   Type Designator: KHB8D8N25F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220IS
 

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KHB8D8N25F2 Datasheet (PDF)

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KHB8D8N25F2

KHB8D8N25P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB8D8N25PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Convertersand switching mode power supplies.FEATURES VDSS= 250V, ID= 8.8A

Datasheet: KHB7D0N65F2 , KHB7D0N65P1 , KHB7D0N80F1 , KHB7D0N80P1 , KHB7D5N60F1 , KHB7D5N60F2 , KHB7D5N60P1 , KHB8D8N25F , IRFP250 , KHB8D8N25P , KHB9D0N50F1 , KHB9D0N50F2 , KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 .

History: NDPL180N10B | BCS4N10 | PSMN3R0-60BS | NTB65N02R | TK4A80E | STP3407 | IRF6648PBF

Keywords - KHB8D8N25F2 MOSFET datasheet

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