All MOSFET. KHB8D8N25P Datasheet

 

KHB8D8N25P Datasheet and Replacement


   Type Designator: KHB8D8N25P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220AB
 

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KHB8D8N25P Datasheet (PDF)

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KHB8D8N25P

KHB8D8N25P/F/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB8D8N25PThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Convertersand switching mode power supplies.FEATURES VDSS= 250V, ID= 8.8A

Datasheet: KHB7D0N65P1 , KHB7D0N80F1 , KHB7D0N80P1 , KHB7D5N60F1 , KHB7D5N60F2 , KHB7D5N60P1 , KHB8D8N25F , KHB8D8N25F2 , 20N50 , KHB9D0N50F1 , KHB9D0N50F2 , KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D .

History: NTGS3441BT1G | TPA60R330M

Keywords - KHB8D8N25P MOSFET datasheet

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