KHB9D0N50F1 MOSFET Datasheet: N-Ch, 500V, 9A. Full specification with pinout and replacement list

KHB9D0N50F1 Specs and Replacement

Type Designator: KHB9D0N50F1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 155.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220IS

KHB9D0N50F1 substitution

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KHB9D0N50F1 datasheet

5.1. Size:1317K kec
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KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V... See More ⇒

7.1. Size:418K kec
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KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin... See More ⇒

7.2. Size:1235K kec
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KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I... See More ⇒

7.3. Size:419K kec
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KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching... See More ⇒

Detailed specifications: KHB7D0N80F1, KHB7D0N80P1, KHB7D5N60F1, KHB7D5N60F2, KHB7D5N60P1, KHB8D8N25F, KHB8D8N25F2, KHB8D8N25P, IRFP450, KHB9D0N50F2, KHB9D0N50P1, KHB9D0N90F1, KHB9D0N90N1, KHB9D0N90NA, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2