Справочник MOSFET. KHB9D0N50F1

 

KHB9D0N50F1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: KHB9D0N50F1
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 155.7 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220IS
     - подбор MOSFET транзистора по параметрам

 

KHB9D0N50F1 Datasheet (PDF)

 5.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N50F1

KHB9D0N50P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N50P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V

 7.1. Size:418K  kec
 khb9d0n90n1.pdf pdf_icon

KHB9D0N50F1

KHB9D0N90N1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and_A +15.60 0.20_B4.80 + 0.20switchin

 7.2. Size:1235K  kec
 khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N50F1

KHB9D0N90P1/F1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N90P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 900V, I

 7.3. Size:419K  kec
 khb9d0n90na.pdf pdf_icon

KHB9D0N50F1

KHB9D0N90NASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and _A +15.60 0.20_B4.80 + 0.20switching

ПОКАЗАТЬ ЕЩЁ

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History: SE4060 | ZXMN0545G4 | IPA600N25NM3S

 

 
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