KU034N08P Datasheet and Replacement
Type Designator: KU034N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 170 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 1150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220AB
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KU034N08P Datasheet (PDF)
ku034n08p.pdf

KU034N08PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 75V, ID= 170A
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: SUP36N20-54P | RQ3E130MN | APT10050LVFR | DMTH4007LK3 | STM8300 | SI1402DH | IRFP150FI
Keywords - KU034N08P MOSFET datasheet
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History: SUP36N20-54P | RQ3E130MN | APT10050LVFR | DMTH4007LK3 | STM8300 | SI1402DH | IRFP150FI



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