All MOSFET. KU034N08P Datasheet

 

KU034N08P MOSFET. Datasheet pdf. Equivalent


   Type Designator: KU034N08P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 170 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 185 nC
   trⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220AB

 KU034N08P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KU034N08P Datasheet (PDF)

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 ku034n08p.pdf

KU034N08P KU034N08P

KU034N08PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 75V, ID= 170A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM2305 | HM13P10 | NCE0107AK | IRFE420 | KP731A

 

 
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