KU034N08P Datasheet and Replacement
Type Designator: KU034N08P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 1150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220AB
KU034N08P substitution
KU034N08P Datasheet (PDF)
ku034n08p.pdf

KU034N08PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description This Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,Synchronous Rectification and a load switch in battery poweredapplicationsFEATURES KVDSS= 75V, ID= 170A
Datasheet: KQ9N50P , KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , 8N60 , KU045N10P , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , KU082N03Q , KU2303D .
History: SI1058X | KU063N03Q | SMK2050CI | SI1046X | SI1330EDL | IRF432 | IRF4410H
Keywords - KU034N08P MOSFET datasheet
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History: SI1058X | KU063N03Q | SMK2050CI | SI1046X | SI1330EDL | IRF432 | IRF4410H



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