KU034N08P Specs and Replacement
Type Designator: KU034N08P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 1150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220AB
KU034N08P substitution
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KU034N08P datasheet
ku034n08p.pdf
KU034N08P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K VDSS= 75V, ID= 170A ... See More ⇒
Detailed specifications: KQ9N50P, KMB012N30QA, KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, IRFZ24N, KU045N10P, KU048N03D, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D, KU082N03Q, KU2303D
Keywords - KU034N08P MOSFET specs
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History: 2SK580L | FHP4N65A
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