KU048N03D PDF and Equivalents Search

 

KU048N03D Specs and Replacement

Type Designator: KU048N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.4 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DPAK

KU048N03D substitution

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KU048N03D datasheet

 ..1. Size:802K  kec
 ku048n03d.pdf pdf_icon

KU048N03D

SEMICONDUCTOR KU048N03D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15... See More ⇒

Detailed specifications: KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P, KU045N10P, 8N60, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D, KU082N03Q, KU2303D, KU2303K, KU2303Q

Keywords - KU048N03D MOSFET specs

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