All MOSFET. KU048N03D Datasheet

 

KU048N03D Datasheet and Replacement


   Type Designator: KU048N03D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.4 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DPAK
 

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KU048N03D Datasheet (PDF)

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KU048N03D

SEMICONDUCTOR KU048N03DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15

Datasheet: KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , KU045N10P , IRFB31N20D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D , KU082N03Q , KU2303D , KU2303K , KU2303Q .

History: 2SK1104 | KU024N06P

Keywords - KU048N03D MOSFET datasheet

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