KU063N03Q Specs and Replacement
Type Designator: KU063N03Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: FLP8
KU063N03Q substitution
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KU063N03Q datasheet
ku063n03q.pdf
SEMICONDUCTOR KU063N03Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A VDSS=30V, ID=16A. DIM MILLIMETERS Drain to Source On Resista... See More ⇒
Detailed specifications: KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P, KU045N10P, KU048N03D, KU054N03D, KU056N03Q, AO3400A, KU068N03D, KU082N03Q, KU2303D, KU2303K, KU2303Q, KU2307D, KU2307K, KU2307Q
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK4201-S19-AY | AO3419L
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