KU2307D MOSFET Datasheet: N-Ch, 30V, 79A. Full specification with pinout and replacement list

KU2307D Specs and Replacement

Type Designator: KU2307D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 79 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 422 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DPAK

KU2307D substitution

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KU2307D datasheet

..1. Size:800K kec
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SEMICONDUCTOR KU2307D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for DC/DC Converter. C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 ... See More ⇒

8.1. Size:900K kec
ku2307k.pdf pdf_icon

SEMICONDUCTOR KU2307K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=79A. Low Drain to Source On-state Resistance. RDS(ON)=6.0m (Max.) @ VGS=10V RDS(ON)... See More ⇒

8.2. Size:806K kec
ku2307q.pdf pdf_icon

SEMICONDUCTOR KU2307Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly H suitable for DC/DC Converter and Battery pack.. T D P G L U FEATURES A VDSS=30V, ID=16A. DIM MILLIMETERS Drain to Source On Resistanc... See More ⇒

9.1. Size:898K kec
ku2303k.pdf pdf_icon

SEMICONDUCTOR KU2303K TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. FEATURES VDSS=30V, ID=66A. Low Drain to Source On-state Resistance. RDS(ON)=7.4m (Max.) @ VGS=10V RDS(ON)... See More ⇒