KU2307D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: KU2307D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 57 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 79 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8.5 ns
Выходная емкость (Cd): 422 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
Тип корпуса: DPAK
KU2307D Datasheet (PDF)
ku2307d.pdf
SEMICONDUCTOR KU2307DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15
ku2307k.pdf
SEMICONDUCTOR KU2307KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=79A.Low Drain to Source On-state Resistance.: RDS(ON)=6.0m(Max.) @ VGS=10V: RDS(ON)
ku2307q.pdf
SEMICONDUCTOR KU2307QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack..TD P GLUFEATURES AVDSS=30V, ID=16A.DIM MILLIMETERSDrain to Source On Resistanc
ku2303k.pdf
SEMICONDUCTOR KU2303KTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for DC/DC Converter.FEATURES VDSS=30V, ID=66A.Low Drain to Source On-state Resistance.: RDS(ON)=7.4m(Max.) @ VGS=10V: RDS(ON)
ku2303d.pdf
SEMICONDUCTOR KU2303DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for DC/DC Converter.C D_A 6.60 + 0.20_B 6.10 + 0.20_C 5.34 + 0.30_D 0.70 + 0.20_E 2.70 + 0.15
ku2303q.pdf
SEMICONDUCTOR KU2303QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=14A.DIM MILLIMETERSDrain to Source On Resistance
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