KU390N10P Datasheet and Replacement
Type Designator: KU390N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TO220AB
KU390N10P substitution
KU390N10P Datasheet (PDF)
ku390n10p.pdf
KU390N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description TENTATIVEThis Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,AOSynchronous Rectification and a load switch in battery poweredCapplicationsFE DIM MILLIME
Datasheet: KU2303Q , KU2307D , KU2307K , KU2307Q , KU2310Q , KU2311K , KU2311Q , KU2751K , AO3407 , KMC6D5CN20CA , KMA3D7P20SA , KMA5D2N30XA , KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 .
History: HSP3105 | IRHMK57260SE
Keywords - KU390N10P MOSFET datasheet
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KU390N10P lookup
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History: HSP3105 | IRHMK57260SE
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