All MOSFET. KU390N10P Datasheet

 

KU390N10P Datasheet and Replacement


   Type Designator: KU390N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO220AB
 

 KU390N10P substitution

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KU390N10P Datasheet (PDF)

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KU390N10P

KU390N10PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description TENTATIVEThis Trench MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for DC/DC Converter,AOSynchronous Rectification and a load switch in battery poweredCapplicationsFE DIM MILLIME

Datasheet: KU2303Q , KU2307D , KU2307K , KU2307Q , KU2310Q , KU2311K , KU2311Q , KU2751K , 2SK3918 , KMC6D5CN20CA , KMA3D7P20SA , KMA5D2N30XA , KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 .

History: IRFB42N20DPBF

Keywords - KU390N10P MOSFET datasheet

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