KU390N10P Specs and Replacement
Type Designator: KU390N10P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: TO220AB
KU390N10P substitution
- MOSFET ⓘ Cross-Reference Search
KU390N10P datasheet
ku390n10p.pdf
KU390N10P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description TENTATIVE This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, A O Synchronous Rectification and a load switch in battery powered C applications F E DIM MILLIME... See More ⇒
Detailed specifications: KU2303Q, KU2307D, KU2307K, KU2307Q, KU2310Q, KU2311K, KU2311Q, KU2751K, EMB04N03H, KMC6D5CN20CA, KMA3D7P20SA, KMA5D2N30XA, KMB8D0P30QA, KMD4D5P30XA, KTK951S, KTK921U, KHB011N40F1
Keywords - KU390N10P MOSFET specs
KU390N10P cross reference
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KU390N10P pdf lookup
KU390N10P substitution
KU390N10P replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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