All MOSFET. KMA5D2N30XA Datasheet

 

KMA5D2N30XA Datasheet and Replacement


   Type Designator: KMA5D2N30XA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TSOP6
 

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KMA5D2N30XA Datasheet (PDF)

 ..1. Size:831K  kec
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KMA5D2N30XA

SEMICONDUCTOR KMA5D2N30XATECHNICAL DATA N-CH Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for cellular phone and netebookcomputer power management and other battery powered circuits.FEATURES VDSS=30V, ID=5.2A.Drain-S

 9.1. Size:750K  kec
 kma5d8dp20q.pdf pdf_icon

KMA5D2N30XA

SEMICONDUCTOR KMA5D8DP20QTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionBattery Packs and Battery-powered portable equipment applications.It s mainly suitable for use as a load switch in battery powered applicationsand protection in battery packs.HTD PG LFEATURES VDSS=-20V, ID=-5.8A.ADrain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=36m (Max.) @ VGS=-4.

Datasheet: KU2307Q , KU2310Q , KU2311K , KU2311Q , KU2751K , KU390N10P , KMC6D5CN20CA , KMA3D7P20SA , HY1906P , KMB8D0P30QA , KMD4D5P30XA , KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 .

History: STI300N4F6 | SRT10N047HD56

Keywords - KMA5D2N30XA MOSFET datasheet

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