KMD4D5P30XA PDF and Equivalents Search

 

KMD4D5P30XA Specs and Replacement

Type Designator: KMD4D5P30XA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1700 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TSOP6

KMD4D5P30XA substitution

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KMD4D5P30XA datasheet

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KMD4D5P30XA

SEMICONDUCTOR KMD4D5P30XA TECHNICAL DATA P-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. D H J FEATURES E VDSS=-30V, ID=-4.... See More ⇒

Detailed specifications: KU2311K, KU2311Q, KU2751K, KU390N10P, KMC6D5CN20CA, KMA3D7P20SA, KMA5D2N30XA, KMB8D0P30QA, 60N06, KTK951S, KTK921U, KHB011N40F1, KHB011N40F2, KHB011N40P1, KHB019N20F1, KHB019N20F2, KHB019N20P1

Keywords - KMD4D5P30XA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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