All MOSFET. KMD4D5P30XA Datasheet

 

KMD4D5P30XA Datasheet and Replacement


   Type Designator: KMD4D5P30XA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1700 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSOP6
 

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KMD4D5P30XA Datasheet (PDF)

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KMD4D5P30XA

SEMICONDUCTOR KMD4D5P30XATECHNICAL DATA P-CH Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for cellular phone and netebookcomputer power management and other battery powered circuits.DHJFEATURES EVDSS=-30V, ID=-4.

Datasheet: KU2311K , KU2311Q , KU2751K , KU390N10P , KMC6D5CN20CA , KMA3D7P20SA , KMA5D2N30XA , KMB8D0P30QA , AO4468 , KTK951S , KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 .

History: IPP037N08N3 | NCEP045N10F

Keywords - KMD4D5P30XA MOSFET datasheet

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