KTK951S Specs and Replacement
Type Designator: KTK951S
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT23
KTK951S substitution
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KTK951S datasheet
ktk951s.pdf
KTK951S SEMICONDUCTOR N CHANNEL JUNCTION FIELD TECHNICAL DATA EFFECT TRANSISTOR LOW FREQUENCY / HIGH FREQUENCY AMPLIFIER APPLICATION E L B L FEATURES DIM MILLIMETERS _ Low Gain Controlled Amplifier A 2.93 0.20 + B 1.30+0.20/-0.15 High Transter Admittance C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 Q L 0.55 P P... See More ⇒
Detailed specifications: KU2311Q, KU2751K, KU390N10P, KMC6D5CN20CA, KMA3D7P20SA, KMA5D2N30XA, KMB8D0P30QA, KMD4D5P30XA, IRFP064N, KTK921U, KHB011N40F1, KHB011N40F2, KHB011N40P1, KHB019N20F1, KHB019N20F2, KHB019N20P1, KHB1D0N60G
Keywords - KTK951S MOSFET specs
KTK951S cross reference
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History: KTK921U
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