KHB1D0N60I Specs and Replacement
Type Designator: KHB1D0N60I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.5 Ohm
Package: IPAK
KHB1D0N60I substitution
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KHB1D0N60I datasheet
khb1d0n60i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A ... See More ⇒
khb1d0n60d i.pdf
KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe... See More ⇒
khb1d0n60g.pdf
SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance ... See More ⇒
khb1d0n70g.pdf
KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B ... See More ⇒
Detailed specifications: KTK921U, KHB011N40F1, KHB011N40F2, KHB011N40P1, KHB019N20F1, KHB019N20F2, KHB019N20P1, KHB1D0N60G, IRF540, KHB1D2N80D, KHB1D2N80I, KHB7D0N65F1, KHB9D5N20F, KTK211, KTK596, KTK597, KTK597E
Keywords - KHB1D0N60I MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: KHB1D2N80I | KHB019N20F2 | KHB019N20F1 | WMK53N65F2
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