KHB1D0N60I - описание и поиск аналогов

 

KHB1D0N60I. Аналоги и основные параметры

Наименование производителя: KHB1D0N60I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 20 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 9.5 Ohm

Тип корпуса: IPAK

Аналог (замена) для KHB1D0N60I

- подборⓘ MOSFET транзистора по параметрам

 

KHB1D0N60I даташит

 ..1. Size:1023K  kec
khb1d0n60i.pdfpdf_icon

KHB1D0N60I

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A

 5.1. Size:957K  kec
khb1d0n60d i.pdfpdf_icon

KHB1D0N60I

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe

 5.2. Size:1019K  kec
khb1d0n60g.pdfpdf_icon

KHB1D0N60I

SEMICONDUCTOR KHB1D0N60G N-Ch Planer MOSFET TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. FEATURES VDSS= 600V, ID= 0.4A Drain-Source ON Resistance

 7.1. Size:412K  kec
khb1d0n70g.pdfpdf_icon

KHB1D0N60I

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B

Другие MOSFET... KTK921U , KHB011N40F1 , KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , IRF540 , KHB1D2N80D , KHB1D2N80I , KHB7D0N65F1 , KHB9D5N20F , KTK211 , KTK596 , KTK597 , KTK597E .

History: SM4305PSKC | 2SK4080-ZK-E2-AY | IRF7473TRPBF | AO8803 | VS3640DB | STD40NF10 | STF15N60M2-EP

 

 

 

 

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