All MOSFET. 2N7002ELT1 Datasheet

 

2N7002ELT1 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002ELT1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.31 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: SOT23

2N7002ELT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7002ELT1 Datasheet (PDF)

1.1. 2n7002elt1.pdf Size:382K _willas

2N7002ELT1
2N7002ELT1

FM120-M WILLAS 2N7002ELT1 THRU Small Signal MOSFET 310 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounte N–Channel SOT–23d appli

3.1. qm2n7002e3k1.pdf Size:307K _update_mosfet

2N7002ELT1
2N7002ELT1

 QM2N7002E3K1 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The QM2N7002E3K1 is the highest performance trench N-CH MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 60V 3Ω 180mA charge for most of the small power switching and load switch applications. Applications The QM2N7002E3K1 meet the RoHS and Green

3.2. 2n7002egp.pdf Size:451K _update-mosfet

2N7002ELT1
2N7002ELT1

CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing dens

 3.3. 2n7002esegp.pdf Size:569K _update-mosfet

2N7002ELT1
2N7002ELT1

CHENMKO ENTERPRISE CO.,LTD 2N7002ESEGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-70/SOT-323 FEATURE * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and

3.4. 2n7002esgp.pdf Size:152K _update-mosfet

2N7002ELT1
2N7002ELT1

CHENMKO ENTERPRISE CO.,LTD 2N7002ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. (1)

 3.5. 2n7002e.pdf Size:92K _philips

2N7002ELT1
2N7002ELT1

2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed

3.6. 2n7002e 1.pdf Size:174K _vishay

2N7002ELT1
2N7002ELT1

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance: 3 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directive 2002/95/EC BENEFIT

3.7. 2n7002e.pdf Size:78K _diodes

2N7002ELT1
2N7002ELT1

2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Pla

3.8. 2n7002e 2.pdf Size:95K _onsemi

2N7002ELT1
2N7002ELT1

2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) http://onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits Simpli

3.9. tsm2n7002e a07.pdf Size:143K _taiwansemi

2N7002ELT1
2N7002ELT1

3.10. 2n7002e.pdf Size:1201K _kexin

2N7002ELT1
2N7002ELT1

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 Low Input Capacitance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Ra

3.11. 2n7002e-3.pdf Size:1214K _kexin

2N7002ELT1
2N7002ELT1

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 +0.02 Low Input Capacitance +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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