All MOSFET. 2N7002ELT1 Datasheet

 

2N7002ELT1 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002ELT1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.225 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.31 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: SOT23

2N7002ELT1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002ELT1 Datasheet (PDF)

1.1. 2n7002elt1.pdf Size:382K _willas

2N7002ELT1
2N7002ELT1

FM120-M WILLAS 2N7002ELT1 THRU Small Signal MOSFET 310 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounte N–Channel SOT–23d appli

3.1. 2n7002e.pdf Size:92K _philips

2N7002ELT1
2N7002ELT1

2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed

3.2. 2n7002e 1.pdf Size:174K _vishay

2N7002ELT1
2N7002ELT1

2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance: 3 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directive 2002/95/EC BENEFIT

 3.3. 2n7002e.pdf Size:78K _diodes

2N7002ELT1
2N7002ELT1

2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Pla

3.4. 2n7002e 2.pdf Size:95K _onsemi

2N7002ELT1
2N7002ELT1

2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) http://onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits Simpli

 3.5. tsm2n7002e a07.pdf Size:143K _taiwansemi

2N7002ELT1
2N7002ELT1

3.6. 2n7002e-3.pdf Size:1214K _kexin

2N7002ELT1
2N7002ELT1

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 +0.02 Low Input Capacitance +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol

3.7. 2n7002e.pdf Size:1201K _kexin

2N7002ELT1
2N7002ELT1

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002E SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 1 2 Low Input Capacitance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Fast Switching Speed Low Input/Output Leakage 1.Base 1 GATE 2.Emitter 2 SOURCE 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Ra

Datasheet: NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .

 
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