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SE2312 Specs and Replacement

Type Designator: SE2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm

Package: SOT23

SE2312 substitution

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SE2312 datasheet

 ..1. Size:426K  willas
 se2312.pdf pdf_icon

SE2312

FM120-M WILLAS THRU SE2312 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz... See More ⇒

Detailed specifications: BSS84LT1, BSS84WT1, SE2301, SE2302, SE2303, SE2304, SE2305, SE2306, 13N50, SE2321, SE3400, SE3401, SE3404, SE3406, SE3407, SE3415, SE4812LT1

Keywords - SE2312 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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