All MOSFET. SE2312 Datasheet

 

SE2312 Datasheet and Replacement


   Type Designator: SE2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm
   Package: SOT23
 

 SE2312 substitution

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SE2312 Datasheet (PDF)

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SE2312

FM120-M WILLASTHRUSE2312 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimiz

Datasheet: BSS84LT1 , BSS84WT1 , SE2301 , SE2302 , SE2303 , SE2304 , SE2305 , SE2306 , TK10A60D , SE2321 , SE3400 , SE3401 , SE3404 , SE3406 , SE3407 , SE3415 , SE4812LT1 .

History: BUK9624-55A | 2SK1446 | PHD82NQ03LT | SVF2N60CNF

Keywords - SE2312 MOSFET datasheet

 SE2312 cross reference
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