All MOSFET. H01N60I Datasheet

 

H01N60I Datasheet and Replacement


   Type Designator: H01N60I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO251
 

 H01N60I substitution

   - MOSFET ⓘ Cross-Reference Search

 

H01N60I Datasheet (PDF)

 8.1. Size:162K  hsmc
 h01n60s.pdf pdf_icon

H01N60I

Spec. No. : MOS200501 HI-SINCERITY Issued Date : 2005.01.01 Revised Date : 2010.11.10 MICROELECTRONICS CORP. Page No. : 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: SourceDescription 3 1 2 This high voltage MOSFET uses an advanced termination scheme

 8.2. Size:58K  hsmc
 h01n60.pdf pdf_icon

H01N60I

Spec. No. : MOS200502HI-SINCERITYIssued Date : 2005.03.01Revised Date : 2006.08.31MICROELECTRONICS CORP.Page No. : 1/5H01N60 Series Pin AssignmentH01N60 SeriesN-Channel Power Field Effect TransistorTab3-Lead Plastic TO-252Package Code: JPin 1: Gate3Pin 2 & Tab: Drain2Description 1Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme topr

Datasheet: SE3406 , SE3407 , SE3415 , SE4812LT1 , SE9435LT1 , SMG2305L , SRK7002LT1 , H01N45A , IRFZ24N , H01N60SA , H01N60SI , H01N60SJ , H02N60E , H02N60F , H02N60I , H02N60J , H02N60SE .

History: STM6610

Keywords - H01N60I MOSFET datasheet

 H01N60I cross reference
 H01N60I equivalent finder
 H01N60I lookup
 H01N60I substitution
 H01N60I replacement

 

 
Back to Top

 


 
.