H01N60SI MOSFET Datasheet: N-Ch, 600V, 1A. Full specification with pinout and replacement list

H01N60SI Specs and Replacement

Type Designator: H01N60SI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm

Package: TO251

H01N60SI substitution

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H01N60SI datasheet

7.1. Size:162K hsmc
h01n60s.pdf pdf_icon

Spec. No. MOS200501 HI-SINCERITY Issued Date 2005.01.01 Revised Date 2010.11.10 MICROELECTRONICS CORP. Page No. 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code A Pin 1 Gate Pin 2 Drain Pin 3 Source Description 3 1 2 This high voltage MOSFET uses an advanced termination scheme ... See More ⇒

8.1. Size:58K hsmc
h01n60.pdf pdf_icon

Spec. No. MOS200502 HI-SINCERITY Issued Date 2005.03.01 Revised Date 2006.08.31 MICROELECTRONICS CORP. Page No. 1/5 H01N60 Series Pin Assignment H01N60 Series N-Channel Power Field Effect Transistor Tab 3-Lead Plastic TO-252 Package Code J Pin 1 Gate 3 Pin 2 & Tab Drain 2 Description 1 Pin 3 Source This high voltage MOSFET uses an advanced termination scheme to pr... See More ⇒

Detailed specifications: SE3415, SE4812LT1, SE9435LT1, SMG2305L, SRK7002LT1, H01N45A, H01N60I, H01N60SA, BS170, H01N60SJ, H02N60E, H02N60F, H02N60I, H02N60J, H02N60SE, H02N60SF, H02N60SI