All MOSFET. H01N60SI Datasheet

 

H01N60SI Datasheet and Replacement


   Type Designator: H01N60SI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO251
 

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H01N60SI Datasheet (PDF)

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H01N60SI

Spec. No. : MOS200501 HI-SINCERITY Issued Date : 2005.01.01 Revised Date : 2010.11.10 MICROELECTRONICS CORP. Page No. : 1/6 H01N60S Series Pin Assignment H01N60S Series 3-Lead Plastic TO-92 N-Channel Power Field Effect Transistor Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: SourceDescription 3 1 2 This high voltage MOSFET uses an advanced termination scheme

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H01N60SI

Spec. No. : MOS200502HI-SINCERITYIssued Date : 2005.03.01Revised Date : 2006.08.31MICROELECTRONICS CORP.Page No. : 1/5H01N60 Series Pin AssignmentH01N60 SeriesN-Channel Power Field Effect TransistorTab3-Lead Plastic TO-252Package Code: JPin 1: Gate3Pin 2 & Tab: Drain2Description 1Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme topr

Datasheet: SE3415 , SE4812LT1 , SE9435LT1 , SMG2305L , SRK7002LT1 , H01N45A , H01N60I , H01N60SA , 18N50 , H01N60SJ , H02N60E , H02N60F , H02N60I , H02N60J , H02N60SE , H02N60SF , H02N60SI .

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