FDS5690 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS5690
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 149 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: SO8
FDS5690 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS5690 Datasheet (PDF)
fds5690.pdf
March 2000FDS569060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 VSemiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V.has been especially tailored to minimize on-stateresistance and yet maintain superior switchingperf
fds5690.pdf
FDS569060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using ON 7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 VSemiconductor's advanced PowerTrench process that RDS(on) = 0.033 @ VGS = 6 V.has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (23nC typ
fds5692z.pdf
February 2006 FDS5692Z N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 10V, ID = 5.8A This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC Max rDS(on) = 33m at VGS = 4.5V, ID = 5.6A converters using either synchronous or conventional switching PWM controller
fds5670.pdf
August 1999FDS567060V N-Channel PowerTrenchTM MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters usingRDS(ON) = 0.017 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge.These MOSFETs feature fas
fds5672.pdf
July 2005FDS5672N-Channel PowerTrench MOSFET60V, 12A, 10mFeatures General Description rDS(ON) = 10m, VGS = 10V, ID = 12A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 14m, VGS = 6V, ID = 10Aeither synchronous or conventional switching PWM controllers. It has been optimized for low gate cha
fds5682.pdf
May 2008FDS5682N-Channel PowerTrench MOSFET 60V, 7.5A, 21mFeatures General Description rDS(ON) = 21m, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(ON) = 26.5m, VGS = 4.5V, ID = 6.7Aeither synchronous or conventional switching PWM controllers. It has been optimized for low g
fds5680.pdf
July 1999FDS568060V N-Channel PowerTrenchTM MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 VSemiconductor's advanced PowerTrench process thatRDS(ON) = 0.025 @ VGS = 6 V.has been especially tailored to minimize on-stateresistance and yet maintain superior switching Low gate charge (30nC t
fds5672.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds5680.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds5670.pdf
FDS5670www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF
Datasheet: FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A , FDS4953 , FDS5680 , STP75NF75 , FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A .
