All MOSFET. H04N60E Datasheet

 

H04N60E Datasheet and Replacement


   Type Designator: H04N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO220AB
 

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H04N60E Datasheet (PDF)

 8.1. Size:123K  hsmc
 h04n60.pdf pdf_icon

H04N60E

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source1Description Tab3-Lead Plastic TO-220ABThis advanced

 9.1. Size:169K  hsmc
 h04n65.pdf pdf_icon

H04N60E

Spec. No. : MOS200802 HI-SINCERITY Issued Date : 2008.07.22 Revised Date :2009.03.23 MICROELECTRONICS CORP. Page No. : 1/6 H04N65 Series Pin Assignment H04N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor (650V, 4A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 1 This advanced high voltage MOSFET is d

Datasheet: H02N60SE , H02N60SF , H02N60SI , H02N60SJ , H02N65E , H02N65F , H03N60E , H03N60F , IRF2807 , H04N60F , H04N65E , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , H06N60E .

History: CEP85N75 | IXFC14N80P | SSM6P36FE | 2SK2196 | AUIRLB3036 | FTK2102

Keywords - H04N60E MOSFET datasheet

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