All MOSFET. H04N65E Datasheet

 

H04N65E Datasheet and Replacement


   Type Designator: H04N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220AB
 

 H04N65E substitution

   - MOSFET ⓘ Cross-Reference Search

 

H04N65E Datasheet (PDF)

 8.1. Size:169K  hsmc
 h04n65.pdf pdf_icon

H04N65E

Spec. No. : MOS200802 HI-SINCERITY Issued Date : 2008.07.22 Revised Date :2009.03.23 MICROELECTRONICS CORP. Page No. : 1/6 H04N65 Series Pin Assignment H04N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor (650V, 4A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 1 This advanced high voltage MOSFET is d

 9.1. Size:123K  hsmc
 h04n60.pdf pdf_icon

H04N65E

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source1Description Tab3-Lead Plastic TO-220ABThis advanced

Datasheet: H02N60SI , H02N60SJ , H02N65E , H02N65F , H03N60E , H03N60F , H04N60E , H04N60F , IRF830 , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , H06N60E , H06N60F , H07N60E .

Keywords - H04N65E MOSFET datasheet

 H04N65E cross reference
 H04N65E equivalent finder
 H04N65E lookup
 H04N65E substitution
 H04N65E replacement

 

 
Back to Top

 


 
.