All MOSFET. H04N65E Datasheet

 

H04N65E Datasheet and Replacement


   Type Designator: H04N65E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220AB
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H04N65E Datasheet (PDF)

 8.1. Size:169K  hsmc
 h04n65.pdf pdf_icon

H04N65E

Spec. No. : MOS200802 HI-SINCERITY Issued Date : 2008.07.22 Revised Date :2009.03.23 MICROELECTRONICS CORP. Page No. : 1/6 H04N65 Series Pin Assignment H04N65 Series Tab3-Lead Plastic TO-220ABN-Channel Power Field Effect Transistor (650V, 4A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: SourceDescription 3 2 1 This advanced high voltage MOSFET is d

 9.1. Size:123K  hsmc
 h04n60.pdf pdf_icon

H04N65E

Spec. No. : MOS200404 HI-SINCERITY Issued Date : 2004.07.01 Revised Date :2010.10.14 MICROELECTRONICS CORP. Page No. : 1/6 H04N60 Series Pin Assignment H04N60 Series Tab3-Lead Plastic TO-263 Package Code: U N-Channel Power Field Effect Transistor (600V, 4A) Pin 1: Gate Pin 2 & Tab: Drain 3 2 Pin 3: Source1Description Tab3-Lead Plastic TO-220ABThis advanced

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: STD17N06LT4 | IPP26CN10NG | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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