H05N50F Datasheet and Replacement
Type Designator: H05N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220FP
H05N50F substitution
H05N50F Datasheet (PDF)
h05n50.pdf
Spec. No. : MOS200601HI-SINCERITYIssued Date : 2006.02.01Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4H05N50 Series Pin AssignmentH05N50 SeriesTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast switching
Datasheet: H02N65F , H03N60E , H03N60F , H04N60E , H04N60F , H04N65E , H04N65F , H05N50E , K2611 , H05N60E , H05N60F , H06N60E , H06N60F , H07N60E , H07N60F , H07N65E , H07N65F .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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