H07N65E
MOSFET. Datasheet pdf. Equivalent
Type Designator: H07N65E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2
Ohm
Package:
TO220AB
H07N65E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H07N65E
Datasheet (PDF)
8.1. Size:161K hsmc
h07n65.pdf
Spec. No. : MOS200801 HI-SINCERITY Issued Date : 2008.07.22 Revised Date : 2009.0514 MICROELECTRONICS CORP. Page No. : 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme
8.2. Size:636K way-on
wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf
WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25
9.1. Size:79K hsmc
h07n60.pdf
Spec. No. : MOS200604 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination schem
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