All MOSFET. H10N60E Datasheet

 

H10N60E MOSFET. Datasheet pdf. Equivalent

Type Designator: H10N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 26 nS

Drain-Source Capacitance (Cd): 325 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220AB

H10N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H10N60E Datasheet (PDF)

4.1. ssh10n60a.pdf Size:923K _samsung

H10N60E
H10N60E

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current : 25 (Max.) @ VDS = 600V ? Low RDS(ON) : 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.2. sgh10n60rufd.pdf Size:273K _samsung

H10N60E
H10N60E

CO-PAK IGBT SGH10N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V @ Ic=10A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

 4.3. ixgp10n60-a ixga10n60-a ixgh10n60-a.pdf Size:56K _ixys

H10N60E
H10N60E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V TO-263 AA (IXGA) VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25C20 A C (TAB) E IC90 TC = 9

4.4. ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf Size:64K _ixys

H10N60E

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 4.5. ixsh10n60b2d1 ixsq10n60b2d1.pdf Size:610K _ixys

H10N60E
H10N60E

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G (TAB) C E IC25 TC = 25C20 A IC110 TC = 110C10 A TO-3P

4.6. ixgh10n60a.pdf Size:42K _igbt

H10N60E
H10N60E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

4.7. ixgh10n60.pdf Size:42K _igbt

H10N60E
H10N60E

Preliminary data VCES IC25 VCE(sat) Low VCE(sat) IGBT IXGA/IXGP/IXGH10N60 600 V 20 A 2.5 V High speed IGBT IXGA/IXGP/IXGH10N60A 600 V 20 A 3.0 V TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings G C E VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V TO-263 AA (IXGA) VGES Continuous ±20 V VGEM Transient ±30 V G IC25 TC = 25°C20 A C (TAB) E

4.8. ixsh10n60b2d1.pdf Size:513K _igbt_a

H10N60E
H10N60E

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G (TAB) C E IC25 TC = 25°C20 A IC110 TC = 110°

4.9. h10n60.pdf Size:205K _hsmc

H10N60E
H10N60E

Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : 2009.08.05 MICROELECTRONICS CORP. Page No. : 1/5 H10N60 Series H10N60 Series Tab 3-Lead Plastic TO-220AB N-Channel Power MOSFET (600V,10A) Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Applications Pin 3: Source 3 2 • Switch Mode Power Supply 1 3-Lead TO-220FP) • Uninterruptable Power

Datasheet: H05N60E , H05N60F , H06N60E , H06N60F , H07N60E , H07N60F , H07N65E , H07N65F , APT50M38JLL , H10N60F , H10N65E , H10N65F , H12N60E , H12N60F , H12N65E , H12N65F , H2301N .

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