FDS6612A MOSFET. Datasheet pdf. Equivalent

   Type Designator: FDS6612A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.4 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SO8

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FDS6612A Datasheet (PDF)

..1. Size:541K fairchild semi
fds6612a.pdf pdf_icon

April 2007FDS6612A tmSingle N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 8.4 A, 30 V. RDS(ON) = 22 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 30 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance

..2. Size:822K cn vbsemi
fds6612a.pdf pdf_icon

FDS6612Awww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

8.1. Size:143K fairchild semi
fds6614a.pdf pdf_icon

January 2000FDS6614AN-Channel Logic Level PowerTrench MOSFETFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench process RDS(on) = 0.025 W @ VGS = 4.5 V.that has been especially tailored to minimize on-stateresistance and yet maintain superior switching per

9.1. Size:118K fairchild semi
fds6682.pdf pdf_icon

February 2004FDS668230V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 14 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 9.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge (

9.2. Size:295K fairchild semi
fds6670as.pdf pdf_icon

July 2010FDS6670AS30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 11.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

9.3. Size:93K fairchild semi
fds6679.pdf pdf_icon

March 2005 FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers.

9.4. Size:505K fairchild semi
fds6675bz.pdf pdf_icon

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS

9.5. Size:643K fairchild semi
fds6609a.pdf pdf_icon

April 2000PRELIMINARYFDS6609AP-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced 6.3 A, 30 V . R = 0.032 @ VGS = -10 VDS(ON)using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailoredR = 0.05 @ VGS = -4.5 VDS(ON)to minimize on-state resistance and yet maintain

9.6. Size:527K fairchild semi
fds6699s.pdf pdf_icon

January 2005FDS6699S30V N-Channel PowerTrench SyncFETFeatures General Description 21 A, 30 V Max RDS(ON) = 3.6 m @ VGS = 10 V The FDS6699S is designed to replace a single SO-8 MOSFETMax RDS(ON) = 4.5 m @ VGS = 4.5 V and Schottky diode in synchronous DC:DC power supplies.This 30V MOSFET is designed to maximize power conversion Includes SyncFET Schottky body diode

9.7. Size:105K fairchild semi
fds6675a.pdf pdf_icon

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

9.8. Size:82K fairchild semi
fds6672a.pdf pdf_icon

April 2001 FDS6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 12.5 A, 30 V. RDS(ON) = 8 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 9.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized f

9.9. Size:107K fairchild semi
fds6680.pdf pdf_icon

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

9.10. Size:226K fairchild semi
fds6673bz.pdf pdf_icon

March 2009FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for b

9.11. Size:104K fairchild semi
fds6681z.pdf pdf_icon

June 2005 FDS6681Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild 20 A, 30 V. RDS(ON) = 4.6 m @ VGS = 10 V Semiconductors advanced PowerTrench process that RDS(ON) = 6.5 m @ VGS = 4.5 V has been especially tailored to minimize the on-state Extended VGSS range (25V) for battery a

9.12. Size:69K fairchild semi
fds6630a.pdf pdf_icon

April 1999FDS6630AN-Channel Logic Level PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel Logic Level MOSFET is produced using 6.5 A, 30 V. RDS(on) = 0.038 @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processthat has been especially tailored to minimize on-state RDS(on) = 0.053 @ VGS = 4.5 Vresistance and yet maintain superior switchingpe

9.13. Size:841K fairchild semi
fds6676as.pdf pdf_icon

May 2008tmFDS6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676AS is designed to replace a single SO-8 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 7.25 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

9.14. Size:452K fairchild semi
fds6690a.pdf pdf_icon

February 2007tmFDS6690A Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 11 A, 30 V. RDS(ON) = 12.5 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 17.0 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resi

9.15. Size:63K fairchild semi
fds6679z.pdf pdf_icon

October 2001 FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. R = 9 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 13 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery charge

9.16. Size:102K fairchild semi
fds6680a.pdf pdf_icon

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

9.17. Size:479K fairchild semi
fds6679az.pdf pdf_icon

March 2009FDS6679AZtmP-Channel PowerTrench MOSFET -30V, -13A, 9mGeneral Description FeaturesThis P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, ID = -13ASemiconductors advanced PowerTrench process that has Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11Abeen especially tailored to minimize the on-stateresistance. Extended VGS r

9.18. Size:746K fairchild semi
fds6690as.pdf pdf_icon

May 2008tmFDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 10 A, 30 V. RDS(ON) max= 12 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 15 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

9.19. Size:199K fairchild semi
fds6675.pdf pdf_icon

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

9.20. Size:78K fairchild semi
fds6690.pdf pdf_icon

February 1997PRELIMINARY FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description Features10 A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V This N Channel Logic Level MOSFET has been designedspecifically to improve the overall efficiency of DC/DC RDS(ON) = 0.0200 @ VGS = 4.5 V.converters using either synchronous or conventional switchingOptimize

9.21. Size:113K fairchild semi
fds6688.pdf pdf_icon

January 2004FDS668830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 6 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 7 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Ultra-low gate charge

9.22. Size:84K fairchild semi
fds6680s.pdf pdf_icon

9.23. Size:137K fairchild semi
fds6670a.pdf pdf_icon

June 2003FDS6670ASingle N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 13 A, 30 V. RDS(ON) = 8 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 10 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

9.24. Size:458K fairchild semi
fds6692a.pdf pdf_icon

January 2010FDS6692AN-Channel PowerTrench MOSFET 30V, 9A, 11.5mFeatures General Description RDS(ON) = 11.5m, VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using RDS(ON) = 14.5m, VGS = 4.5V, ID = 8.2Aeither synchronous or conventional switching PWM controllers. It has been optimized for

9.25. Size:982K fairchild semi
fds6680as.pdf pdf_icon

May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

9.26. Size:600K fairchild semi
fds6673bz f085.pdf pdf_icon

July 2009FDS6673BZ_F085 P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5A Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V)

9.27. Size:130K fairchild semi
fds6673az.pdf pdf_icon

April 2005FDS6673AZ30 Volt P-Channel PowerTrench MOSFETFeatures General Description 14.5 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V This P-Channel MOSFET has been designed specifically toRDS(ON) = 11 m @ VGS = 4.5 V improve the overall efficiency of DC/DC converters using eithersynchronous or conventional switching PWM controllers, and Extended VGSS range (

9.28. Size:687K fairchild semi
fds6688s.pdf pdf_icon

November 2007tmFDS6688S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6688S is designed to replace a single SO-8 16 A, 30 V. RDS(ON) = 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

9.29. Size:114K fairchild semi
fds6694.pdf pdf_icon

January 2004FDS669430V N-Channel Fast Switching PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 12 A, 30 V. RDS(ON) = 11 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 13.5 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Lo

9.30. Size:784K fairchild semi
fds6688as.pdf pdf_icon

November 2008tmFDS6688AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6688AS is designed to replace a single SO-8 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 7.3 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

9.31. Size:235K onsemi
fds6682.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.32. Size:321K onsemi
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9.33. Size:447K onsemi
fds6675bz.pdf pdf_icon

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9ASemiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

9.34. Size:285K onsemi
fds6673bz.pdf pdf_icon

FDS6673BZP-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mFeaturesGeneral Description Max rDS(on) = 7.8m, VGS = -10V, ID = -14.5AThis P-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that Max rDS(on) = 12m, VGS = -4.5V, ID = -12Ahas been especially tailored to minimize the on-state Extended VGS range (-25V) for battery applicatio

9.35. Size:229K onsemi
fds6680a.pdf pdf_icon

FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerRDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate

9.36. Size:534K onsemi
fds6679az.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

9.37. Size:777K onsemi
fds6690as.pdf pdf_icon

9.38. Size:282K onsemi
fds6675.pdf pdf_icon

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize the Low gate charge (30nC typical).on-state resistance and yet

9.39. Size:250K onsemi
fds6670a.pdf pdf_icon

9.40. Size:852K onsemi
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9.41. Size:1435K cn vbsemi
fds6670as.pdf pdf_icon

FDS6670ASwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

9.42. Size:1428K cn vbsemi
fds6699s.pdf pdf_icon

FDS6699Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

9.43. Size:812K cn vbsemi
fds6673bz.pdf pdf_icon

FDS6673BZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

9.44. Size:887K cn vbsemi
fds6681z.pdf pdf_icon

FDS6681Zwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV p-channel power MOSFETVDS (V) -30RDS(on) max. () at VGS = 10 V 0.0050 Enables higher power densityRDS(on) max. () at VGS = 4.5 V 0.0080 100 % Rg and UIS testedQg typ. (nC) 27ID (A) 18Configuration SingleAPPLICATIONSSO-8 SingleSD Battery management in m

9.45. Size:1469K cn vbsemi
fds6630a.pdf pdf_icon

FDS6630Awww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

9.46. Size:814K cn vbsemi
fds6675b.pdf pdf_icon

FDS6675Bwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

9.47. Size:811K cn vbsemi
fds6679az.pdf pdf_icon

FDS6679AZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G

9.48. Size:822K cn vbsemi
fds6694.pdf pdf_icon

FDS6694www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

Datasheet: FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 , IRLB4132 , FDS6614A , FDS6630A , FDS6670A , FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A .

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FDS6612A MOSFET. Datasheet pdf. Equivalent

FDS6612A Datasheet (PDF)

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