All MOSFET. IRF721FI Datasheet

 

IRF721FI MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF721FI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 350 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: ISOWATT220

IRF721FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF721FI Datasheet (PDF)

4.1. irf7210pbf.pdf Size:547K _upd-mosfet

IRF721FI
IRF721FI

PD - 97040 IRF7210PbF HEXFET® Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.007Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic

4.2. irf7210.pdf Size:78K _international_rectifier

IRF721FI
IRF721FI

PD- 91844A IRF7210 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.007? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit pro

 5.1. irf720pbf.pdf Size:201K _upd-mosfet

IRF721FI
IRF721FI

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 V Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 1.8 RoHS* • Fast Switching Qg (Max.) (nC) 20 COMPLIANT • Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D

5.2. irf7240pbf.pdf Size:121K _upd-mosfet

IRF721FI
IRF721FI

PD- 95253 IRF7240PbF HEXFET® Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A l Surface Mount 0.025@VGS = -4.5V -8.4A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistan

 5.3. irf720spbf.pdf Size:199K _upd-mosfet

IRF721FI
IRF721FI

IRF720S, SiHF720S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 • Surface Mount RDS(on) ()VGS = 10 V 1.8 • Available in Tape and Reel Qg (Max.) (nC) 20 • Dynamic dV/dt Rating Qgs (nC) 3.3 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Sing

5.4. irf7205pbf.pdf Size:277K _upd-mosfet

IRF721FI
IRF721FI

 IRF7205PbF l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET 2 7 S D l Surface Mount l Available in Tape & Reel 3 6 S D Ω l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free Top View Description

 5.5. irf7205pbf-1.pdf Size:273K _upd-mosfet

IRF721FI
IRF721FI

IRF7205PbF-1 HEXFET® Power MOSFET A VDS -30 V 1 8 S D RDS(on) max 2 7 0.07 Ω S D (@V = -10V) GS 3 6 RDS(on) max S D 0.13 Ω (@V = -4.5V) GS 4 5 G D Qg (typical) 27 nC SO-8 ID Top View -4.6 A (@T = 25°C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturi

5.6. irf720lpbf.pdf Size:176K _upd-mosfet

IRF721FI
IRF721FI

IRF720S, SiHF720S, IRF720L, SiHF720L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount • Available in tape and reel VDS (V) 400 • Dynamic dV/dt rating RDS(on) ()VGS = 10 V 1.8 Available • Repetitive avalanche rated Qg (Max.) (nC) 20 • Fast switching Qgs (nC) 3.3 • Ease of paralleling Available • Simple drive requirements Q

5.7. irf7202.pdf Size:349K _upd-mosfet

IRF721FI
IRF721FI



5.8. irf7220gpbf.pdf Size:183K _upd-mosfet

IRF721FI
IRF721FI

PD -96258 IRF7220GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -14V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D l Halogen-Free RDS(on) = 0.012Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resi

5.9. irf7241pbf.pdf Size:170K _upd-mosfet

IRF721FI
IRF721FI

PD - 95294 IRF7241PbF HEXFET® Power MOSFET ● Trench Technology VDSS RDS(on) max (mW) ID ● Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A ● P-Channel MOSFET 70@VGS = -4.5V -5.0A ● Available in Tape & Reel ● Lead-Free A 1 8 S D Description 2 7 New trench HEXFET® Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achie

5.10. irf7201pbf.pdf Size:173K _upd-mosfet

IRF721FI
IRF721FI

PD- 95022 IRF7201PbF l Generation V Technology HEXFET® Power MOSFET l Ultra Low On-Resistance A A 1 8 l N-Channel MOSFET S D VDSS = 30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 l Fast Switching G D RDS(on) = 0.030Ω l Lead-Free Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utiliz

5.11. irf7204pbf.pdf Size:243K _upd-mosfet

IRF721FI
IRF721FI

PD - 95165 IRF7204PbF HEXFET® Power MOSFET l Adavanced Process Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D RDS(on) = 0.060Ω l Dynamic dv/dt Rating 4 5 G D l Fast Switching l Lead-Free ID = -5.3A Top View Description Fourth Generation HEXFETs from International Rectifier util

5.12. irf7233pbf.pdf Size:161K _upd-mosfet

IRF721FI
IRF721FI

PD - 95939 IRF7233PbF HEXFET® Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -12V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.020Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon a

5.13. irf7220pbf.pdf Size:155K _upd-mosfet

IRF721FI
IRF721FI

PD - 95172 IRF7220PbF HEXFET® Power MOSFET l Ultra Low On-Resistance A 1 8 S D l P-Channel MOSFET VDSS = -14V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Lead-Free 4 5 G D RDS(on) = 0.012Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silic

5.14. irf7207pbf.pdf Size:150K _upd-mosfet

IRF721FI
IRF721FI

PD - 95166 IRF7207PbF HEXFET® Power MOSFET l Generation 5 Technology A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D l Fast Switching RDS(on) = 0.06Ω l Lead-Free Top View Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techni

5.15. irf720-1-2-3-fi.pdf Size:476K _st2

IRF721FI
IRF721FI

5.16. irf720b.pdf Size:879K _fairchild_semi

IRF721FI
IRF721FI

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switchi

5.17. irf720spbf.pdf Size:1163K _international_rectifier

IRF721FI
IRF721FI

PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outline D

5.18. irf7233.pdf Size:92K _international_rectifier

IRF721FI
IRF721FI

PD- 91849D IRF7233 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provide

5.19. irf7204.pdf Size:145K _international_rectifier

IRF721FI
IRF721FI

PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

5.20. irf7205.pdf Size:166K _international_rectifier

IRF721FI
IRF721FI

PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

5.21. irf7201.pdf Size:182K _international_rectifier

IRF721FI
IRF721FI

PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

5.22. irf7240.pdf Size:229K _international_rectifier

IRF721FI
IRF721FI

PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6 S D

5.23. irf720s.pdf Size:363K _international_rectifier

IRF721FI
IRF721FI

5.24. irf7207.pdf Size:89K _international_rectifier

IRF721FI
IRF721FI

PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06? Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

5.25. irf720.pdf Size:894K _international_rectifier

IRF721FI
IRF721FI

PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline Dime

5.26. irf7220.pdf Size:81K _international_rectifier

IRF721FI
IRF721FI

PD- 91850C IRF7220 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -14V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.012? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit pro

5.27. irf7241.pdf Size:178K _international_rectifier

IRF721FI
IRF721FI

PD- 94087 IRF7241 HEXFET Power MOSFET ?) ?) ?) ?) Trench Technology VDSS RDS(on) max (m?) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achieve extremely low on-

5.28. irf720a.pdf Size:926K _samsung

IRF721FI
IRF721FI

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

5.29. irf720 sihf720.pdf Size:201K _vishay

IRF721FI
IRF721FI

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thi

5.30. irf7205.pdf Size:1894K _kexin

IRF721FI
IRF721FI

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-4.6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 70mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 Source 5 Drain ● Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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