SGSP367 Specs and Replacement
Type Designator: SGSP367
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO220
SGSP367 substitution
- MOSFET ⓘ Cross-Reference Search
SGSP367 datasheet
Detailed specifications: SGSP330, SGSP341, SGSP351, SGSP358, SGSP361, SGSP362, SGSP363, SGSP364, IRFZ44N, SGSP369, SGSP381, SGSP382, SGSP461, SGSP462, SGSP471, SGSP472, SGSP474
Keywords - SGSP367 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AP9420GM | MMF60R360QTH
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