2SJ109
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ109
Type of Transistor: JFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 0.02
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 125
Ohm
Package: 2-10M1A
2SJ109
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ109
Datasheet (PDF)
9.1. Size:283K toshiba
2sj106.pdf
2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O
9.2. Size:339K toshiba
2sj108.pdf
2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Y |: |Y | = 22 mS (typ.) fs fs(V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i
9.3. Size:382K toshiba
2sj104.pdf
2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R = 40 (typ.) (I = -5 mA) DS (ON) DSS Complimentary to 2SK364 Maximum Ratings (Ta == 25C) ==Characteristics Symbo
9.4. Size:286K toshiba
2sj105.pdf
2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S
9.5. Size:282K toshiba
2sj103.pdf
2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK246 Maxim
9.6. Size:321K toshiba
2sj107.pdf
2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R : R = 40 (typ.) DS (ON) DS (ON) Small package Complementary to 2SK366 Maximum Ratings (Ta == 25C) ==Chara
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