All MOSFET. 2SJ109 Datasheet

 

2SJ109 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ109
   Type of Transistor: JFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 125 Ohm
   Package: 2-10M1A

 2SJ109 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ109 Datasheet (PDF)

 ..1. Size:242K  toshiba
2sj109.pdf

2SJ109 2SJ109

 9.1. Size:283K  toshiba
2sj106.pdf

2SJ109 2SJ109

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

 9.2. Size:339K  toshiba
2sj108.pdf

2SJ109 2SJ109

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Y |: |Y | = 22 mS (typ.) fs fs(V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i

 9.3. Size:382K  toshiba
2sj104.pdf

2SJ109 2SJ109

2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R = 40 (typ.) (I = -5 mA) DS (ON) DSS Complimentary to 2SK364 Maximum Ratings (Ta == 25C) ==Characteristics Symbo

 9.4. Size:286K  toshiba
2sj105.pdf

2SJ109 2SJ109

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

 9.5. Size:282K  toshiba
2sj103.pdf

2SJ109 2SJ109

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK246 Maxim

 9.6. Size:321K  toshiba
2sj107.pdf

2SJ109 2SJ109

2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R : R = 40 (typ.) DS (ON) DS (ON) Small package Complementary to 2SK366 Maximum Ratings (Ta == 25C) ==Chara

Datasheet: STVHD90 , BF244A , BF244B , BF244C , 19MT050XF , 2SJ104 , 2SJ107 , 2SJ108 , AO4407 , 2SJ113 , 2SJ115 , 2SJ116 , 2SJ117 , 2SJ118 , 2SJ119 , 2SJ130 , 2SJ175 .

 

 
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