2SJ117 PDF and Equivalents Search

 

2SJ117 Specs and Replacement

Type Designator: 2SJ117

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220AB

2SJ117 substitution

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2SJ117 datasheet

 ..1. Size:20K  hitachi
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2SJ117

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain G (Flange) 3. Source S 2SJ117... See More ⇒

 9.1. Size:208K  hitachi
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2SJ117

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2SJ117

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Detailed specifications: 19MT050XF , 2SJ104 , 2SJ107 , 2SJ108 , 2SJ109 , 2SJ113 , 2SJ115 , 2SJ116 , SPP20N60C3 , 2SJ118 , 2SJ119 , 2SJ130 , 2SJ175 , 2SJ181 , 2SJ244 , 2SJ307 , 2SJ317 .

Keywords - 2SJ117 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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