2SJ117 Datasheet and Replacement
Type Designator: 2SJ117
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220AB
2SJ117 substitution
2SJ117 Datasheet (PDF)
2sj117.pdf
2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117
Datasheet: 19MT050XF , 2SJ104 , 2SJ107 , 2SJ108 , 2SJ109 , 2SJ113 , 2SJ115 , 2SJ116 , IRF9540N , 2SJ118 , 2SJ119 , 2SJ130 , 2SJ175 , 2SJ181 , 2SJ244 , 2SJ307 , 2SJ317 .
History: AP2N1K2EN1 | 2SK3058-ZJ | RDX080N50FU6 | SSW65R090S2 | SPP80N06S2L-09 | MTB02N03H8
Keywords - 2SJ117 MOSFET datasheet
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History: AP2N1K2EN1 | 2SK3058-ZJ | RDX080N50FU6 | SSW65R090S2 | SPP80N06S2L-09 | MTB02N03H8
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