2SJ117 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SJ117
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220AB

2SJ117 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ117 Datasheet (PDF)

..1. Size:20K hitachi
2sj117.pdf

2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117

9.1. Size:208K hitachi
2sj116.pdf