All MOSFET. 2SJ181 Datasheet

 

2SJ181 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ181

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Drain Current |Id|: 0.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 15 Ohm

Package: DPAK

2SJ181 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ181 Datasheet (PDF)

1.1. r07ds0395ej 2sj181ls.pdf Size:103K _renesas

2SJ181
2SJ181

Preliminary Datasheet R07DS0395EJ0300 2SJ181(L), 2SJ181(S) (Previous: REJ03G0848-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RE

1.2. 2sj181.pdf Size:87K _renesas

2SJ181
2SJ181

2SJ181(L), 2SJ181(S) Silicon P Channel MOS FET REJ03G0848-0200 (Previous: ADE-208-1183) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS

 1.3. 2sj181s.pdf Size:1211K _kexin

2SJ181
2SJ181

SMD Type MOSFET P-Channel MOSFET 2SJ181S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-600V ● ID =-0.5 A (VGS =-10V) 0.127 +0.1 0.80-0.1 max ● RDS(ON) < 25Ω (VGS =-10V) D ● High speed switching G ● Low drive current + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 2 Drain 4 .60 -0.15 3 Source 4 Drain S

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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