2SJ364
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ364
Marking Code: 4M
Type of Transistor: JFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 0.02
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 300
Ohm
Package:
SC70
2SJ364
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ364
Datasheet (PDF)
..1. Size:28K panasonic
2sj364.pdf 
Silicon Junction FETs (Small Signal) 2SJ3642SJ364Silicon P-Channel JunctionUnit : mmFor analog switch2.1 0.10.425 1.25 0.1 0.425 Features Low ON-resistance1 Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitGate-Drain voltage VGDS 65 V1 : SourceDrain current ID 20 mA2 : Drain EIAJ : SC-70Gate cur
9.1. Size:204K toshiba
2sj360.pdf
2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 0.55 (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS =
9.2. Size:91K sanyo
2sj362.pdf
Ordering number:EN4918P-Channel Silicon MOSFET2SJ362Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ362]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ362]6.5 2.35.0 0.5
9.3. Size:37K hitachi
2sj363.pdf
2SJ363Silicon P-Channel MOS FETApplicationLow frequency power switchingFeatures Low on-resistance Low drive current 4 V gate drive device can be driven from 5 V sourceOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SJ363Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 30 VGate to source vo
9.4. Size:43K hitachi
2sj361.pdf
2SJ361Silicon P-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V sourceOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SJ361Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS
9.7. Size:1562K kexin
2sj360.pdf
SMD Type MOSFETP-Channel MOSFET2SJ3601.70 0.1 Features VDS (V) =-60V ID =-1 A RDS(ON) 0.73 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS =-4V) High forward transfer admittance1.GateD 2.Drain3.SourceG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Drain-Gate voltage
9.8. Size:834K cn vbsemi
2sj363.pdf
2SJ363www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL
9.9. Size:821K cn vbsemi
2sj360.pdf
2SJ360www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.058 at VGS = - 10 V - 6.5APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 5.5 Load SwitchSDGDG D SP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Lim
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